1. 半导体物理与器件；
2. 宽带半导体器件物理、工艺、测试、产业化及应用；
3. 器件模拟及仿真；
4. 电力系统；
2019.10-至今，复旦大学，工程与应用技术研究院，特聘教授
2019.04-2019.08，Alpha&Omega Semiconductors，技术部，资深主任工程师
2018.04-2019.04，北卡州立大学，电子和计算机系，客座教授
2017.10-2019.04，电力美国技术研究院，电力半导体器件部，主任
2005.02-2017.10，Cree, Inc，研发部，高级科学家
2001.10-2005.02，Rockwell Scientific Company，研发部，研究员
1997.09-2001.04，University of South Carolina，电子工程，博士
1994.09-1997.08，清华大学，电力电子技术，硕士
1987.09-1992.08，清华大学，微电子学，学士
1. J. Wang, V. Veliadis, J. Zhang, Y. Alsmadi, P. Wilson, and M. Scott, “A roadmap for Silicon Carbide adoption in power conversion applications”, IEEE Power Electronics Magazine, Vol. 5, No. 2, June 2018.
2. V. Veliadis, R. Kaplar, J. Zhang, M. Bakowski, S. Khalil, and P. moens, “WBG and UWBG materials and devices are examed in a new working group”, IEEE Power Electronics Magazine, Vol. 5, No. 2, June 2018.
3. H. O’Briean, A. Ogunniyi, J. Zhang, and B. Hull, “SiC MOSFETs designed and evaluated for linear mode operation”, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
4. P. A. Ivanov, V. S. Yuferev, M. E. Levinshtein, J. Q. Zhang, J. W. Palmour, "Collector Conductivity Modulation in 1200-V 4H-SiC BJTs", Materials Science Forum, Vol. 897, pp. 563-566, 2017.
5. Q. J. Zhang, G. Wang, C. Jonas, C. Capell, S. Pickle, P. Butler, D. J. Lichtenwalner, E. van Brunt,H. Ryu, J. Richmond, B. Hull, J. Casady, S. Allen, J. W. Palmour, J. Q. Zhang, "Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed", Materials Science Forum, Vol. 897, pp. 521-524, 2017.
春——半导体材料与器件测试
秋——现代功率半导体器件基础
苏州大学 物理学
入学复旦：2020.9专业：物理电子学
曾获国家奖学金、优秀毕业生等荣誉
